Year: 2005
Type: article
Abstract: A theoretical description of processes responsible for thermally activated nonradiative relaxation of excited ${\mathrm{Er}}^{3+}$ ions in Si is developed. Microscopic models for the back transfer mechanism of excitation reversal and for Auger energy transfer to free and localized carriers are proposed. Simulations based on physical parameters are made and reasonable agreement with experiment is obtained. At the same time, the proposed theoretical treatment reveals aspects of the Auger deexcitation. In particular, important differences between interaction with free electrons and free holes are concluded. Experimental support for these findings is pointed out.
Source: Physical Review B
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Funder: Vlaamse regering
OpenAlex ID: W2004809433