Work

Electrical characteristics of InP grown by molecular beam epitaxy using a valved phosphorus cracking cell

Year: 1994

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.587057

Authors: J. N. Baillargeon, A. Y. Cho, R. J. Fischer, P. J. Pearah, K. Y. Cheng

Institutions: AT&T (United States), University of Illinois Urbana-Champaign

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005138584

FWCI: 5.273

Cites:

Cited by: 37

Related to: 10