Work

Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy

Year: 1986

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.336819

Authors: S. Nojima, H. Tanaka, H. Asahi

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005146062

FWCI: 2.816

Cites: 13

Cited by: 74

Related to: 10