Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors
Year: 2009
Type: article
Abstract: The impact of top-electrode metal on the conduction mechanisms of HfO2 thin films-based metal-insulator-metal capacitors was investigated at temperature ranging from 25 to 150 °C. Al, Cr, and Au are considered as top electrodes whereas Pt constitutes the commune bottom electrode. It was found for both capacitors that in the high field region, the leakage mechanism is electrode-limited. The leakage current, measured at the Al/HfO2 and Cr/HfO2 interfaces, was largely governed by Fowler–Nordheim tunneling in the whole measured temperature range. The barrier heights, at the Al/HfO2 and the Cr/HfO2 interfaces, were around 0.77 and 0.95 eV, respectively. In the case of Au/HfO2/Pt capacitors, the Au/HfO2 interface acts as a Schottky barrier with a height of 1.06 eV.
Source: Journal of Applied Physics
DOI: 10.1063/1.3226857
Authors: F. El Kamel, P. Gonon, C. Vallée, C. Jorel
Institutions: Centre National de la Recherche Scientifique, Laboratoire de Génie Électrique de Grenoble, Université Joseph Fourier, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire des Technologies de la Microélectronique, Laboratoire d'Électronique des Technologies de l'Information
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2005166503