Year: 2010
Type: article
Abstract: The authors developed SiC power module with large rated current by connecting multiple SiC MOSFETs in parallel. This paper characterizes and evaluates its high switching frequency operation performance by comparing it with the conventional Si IGBT module. First, the static current-voltage characteristics and terminal capacitance-voltage characteristics are evaluated. Then, the switching behavior of the SiC power module is experimentally evaluated in the DC-DC boost converter circuit. The results clarified the superiority of the developed SiC power module for fast switching capability and low switching loss.
Source: IEICE Electronics Express
DOI: 10.1587/elex.7.1008
Authors: Tsuyoshi Funaki, Hiroyasu Inoue, Masashi Sasagawa, Takashi Nakamura
Institutions: The University of Osaka, ROHM
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2005192532