Work

Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

Year: 2008

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2008.02.133

Authors: Hiroaki Arimura, Shinya Horie, Yudai Oku, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Institutions: The University of Osaka, Canon Anelva (Japan), Anelva Corporation (Japan), Research Center for Precision Engineering

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2005260136

FWCI: 0.299

Cites: 5

Cited by: 1

Related to: 10