Work

High mobility Si-Ge channels and novel high-k materials for nanomosfets

Year: 2010

Type: conference-paper

DOI: 10.1109/smicnd.2010.5650285

Authors: W Yu, B Zhang, E Durgun-Özben, R A Minamisawa, R Luptak, M Hagedorn, B Holländer, J Schubert, J M Hartmann, K K Bourdelle, Q T Zhao, D Buca, S Mantl

Institutions: Forschungszentrum Jülich, Jülich Aachen Research Alliance, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Soitec (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005264682

FWCI:

Cites: 22

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Related to: 10