Work

Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

Year: 1996

Type: article

Source: Applied Surface Science

DOI: 10.1016/s0169-4332(96)00185-7

Authors: R. Venkatasubramanian, Vamsee K. Pamula, Donald L. Dorsey

Institutions: University of Nevada, Las Vegas, Wright-Patterson Air Force Base, Wright Laboratory

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005265751

FWCI: 0.96

Cites: 15

Cited by: 8

Related to: 10