Work

Empirical Modeling of Low Energy Boron Implants in Silicon

Year: 1985

Type: article

Abstract: The depth distribution of low energy boron implants in silicon are analyzed using secondary ion mass spectroscopy. The profiles for equivalent energy implants of B + (10–30 keV) and (50–120 keV) are compared. Fluorine trapping in implants is also investigated. New range parameters are extracted from the measured profiles using a least squares fitting technique. The Pearson IV distribution provides an excellent representation of the doping profile in B + implants, while for implants the profiles are better represented using a gaussian distribution with an attached exponential tail.

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2114323

Authors: M. Simard‐Normandin, C. Slaby

Institution: Nortel (Canada)

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Arizona State University, Division of Materials Research

Award: Quantitative Ion Microanalysis (Materials Research)