Work

A hydrogen storage layer on the surface of silicon nitride films

Year: 2008

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2921052

Authors: Ziyuan Liu, Shuu Ito, Markus Wilde, Katsuyuki Fukutani, Ichiro Hirozawa, Tomoyuki Koganezawa

Institutions: NEC (Japan), Japan Science and Technology Agency, Institute of Industrial Science, The University of Tokyo, The University of Tokyo, Japan Synchrotron Radiation Research Institute

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005305771

FWCI: 2.091

Cites: 8

Cited by: 18

Related to: 10