Work

Effect of Al doping on the retention behavior of HfO2 resistive switching memories

Year: 2015

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2015.04.043

Authors: Jacopo Frascaroli, Flavio Giovanni Volpe, Stefano Brivio, Sabina Spiga

Institutions: University of Milan, Institute for Microelectronics and Microsystems

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005383797

FWCI: 3.573

Cites: 22

Cited by: 62

Related to: 10