Work

Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy

Year: 1992

Type: article

Abstract: Strained SiGe/Si single quantum well structures were successfully grown by gas-source molecular beam epitaxy using disilane and germane. Quantum confined excitonic transitions of band-edge states dominated low-temperature photoluminescence (PL) spectra. The temperature dependence of PL intensity was in agreement with type-I quantum well formation. The quantum size effect was evidenced in these structures by the fact that the transition energy increased with decreasing well width.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.31.l1319

Authors: Susumu Fukatsu, Hironobu Yoshida, Noritaka Usami, Akira Fujiwara, Yutaka Takahashi, Yasuhiro Shiraki Ito

Institutions: Research Center for Advanced Science and Technology, The University of Tokyo, The University of Tokyo

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2005408058

FWCI: 2.864

Cites: 12

Cited by: 29

Related to: 10