Work

Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments

Year: 2014

Type: article

Abstract: The inuence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied.It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) lm in the structures with the two-layer gate dielectric SiO2PSG under high-eld FowlerNordheim electron injection can be used for the characteristics modication of MOS-structures with above described structure.The injection-thermal and plasma treatments of MOS-structures are oered to use for improving the reliability and nding the samples which have the charge defects.It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric lms of MOS-structures due to structural changes in the SiO2 lm and SiSiO2 interface.

Source: Acta Physica Polonica A

DOI: 10.12693/aphyspola.125.1371

Authors: V.V. Andreev, G.G. Bondarenko, V.M. Maslovsky, A.A. Stolyarov

Institutions: Bauman Moscow State Technical University, National Research University Higher School of Economics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Russian Foundation for Basic Research, Ministry of Education and Science of the Russian Federation, National Research University Higher School of Economics

OpenAlex ID: W2005444500

FWCI: 0.973

Cites: 6

Cited by: 11

Related to: 10