Work

Resistive switching and memory effects of AgI thin film

Year: 2007

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/0022-3727/40/16/004

Authors: X F Liang, Y Chen, L Shi, J Lin, J Yin, Z G Liu

Institutions: National Laboratory of Solid State Microstructures, Nanjing University, California NanoSystems Institute, University of California, Los Angeles

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005456176

FWCI: 1.189

Cites: 14

Cited by: 36

Related to: 10