Work

Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, δ-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application

Year: 2001

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1328787

Authors: Y. Fu, T. H. Wang, M. Willander

Institutions: Chalmers University of Technology, University of Gothenburg, Chinese Academy of Sciences, Institute of Physics

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W2005487687

FWCI: 0.942

Cites: 10

Cited by: 12

Related to: 10