Work

AlGaInN-based laser diodes

Year: 2000

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.382094

Authors: Shiro Uchida, Satoru Kijima, Tsuyoshi Tojyo, Shinichi Ansai, Motonubu Takeya, Tomonori Hino, Katsuyoshi Shibuya, Shinroh Ikeda, Takeharu Asano, Katsunori Yanashima, Shigeki Hashimoto, Tsunenori Asatsuma, Masafumi Ozawa, Toshimasa Kobayashi, Yoshifumi Yabuki, Tsuneyoshi Aoki, Masao Ikeda

Institution: Sony (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005503016

FWCI: 44.27

Cites:

Cited by: 13

Related to: 10