Year: 2011
Type: article
Abstract: In this report, we study electromechanical properties of suspended InAs nanowire resonators. At low temperatures, the nanowire acts as the island of a single electron transistor, and a strong coupling between electron transport and mechanical modes is observed for resonant mechanical driving. Further, as a function of the mechanical drive frequency, the conductance exhibits a Fano lineshape. This arises from the interference between two contributions to potential of the single electron transistor coming from capacitively induced charges and the mechanical oscillation. The quality factor (Q) of these devices is ∼105 at 100 mK.
Source: Applied Physics Letters
DOI: 10.1063/1.3663631
Authors: Hari S. Solanki, Shamashis Sengupta, Sudipta Dubey, Vibhor Singh, Sajal Dhara, Anil Kumar, Arnab Bhattacharya, S. Ramakrishnan, Aashish A. Clerk, Mandar M. Deshmukh
Institutions: Tata Institute of Fundamental Research, McGill University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2005532461