Work

Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition

Year: 1988

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.100305

Authors: Peter S. Whitney, Kunihiko Uwai, Hiroshi Nakagome, Ke’ichiro Takahei

Institutions: NTT (Japan), NTT Basic Research Laboratories

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005641381

FWCI: 5.175

Cites: 9

Cited by: 106

Related to: 10