Work

Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

Year: 1990

Type: article

Abstract: We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.

Source: Journal of Applied Physics

DOI: 10.1063/1.344976

Authors: A. A. Bernussi, F. Iikawa, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipolito

Institutions: Centre for Research and Development in Telecommunications (Brazil), Universidade Estadual de Campinas (UNICAMP), Universidade de São Paulo

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2005692558

FWCI: 2.429

Cites: 11

Cited by: 20

Related to: 10