Work

PbEuTe lasers with 4-6 mu m wavelength made with hot-wall epitaxy

Year: 1989

Type: article

Source: IEEE Journal of Quantum Electronics

DOI: 10.1109/3.29272

Authors: H. Ebe, Y. Nishijima, K. Shinohara

Institution: Fujitsu (Japan)

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005709255

FWCI:

Cites: 15

Cited by:

Related to: 10