Work

An Analytical Switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation

Year: 2015

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2015.2409977

Authors: Kangping Wang, Xu Yang, Hongchang Li, Huan Ma, Xiangjun Zeng, Wenjie Chen

Institution: Xi'an Jiaotong University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Delta Environmental and Educational Foundation

Award: G5438293850

OpenAlex ID: W2005804343

FWCI: 4.8

Cites: 23

Cited by: 131

Related to: 10