Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer
Year: 2009
Type: article
Abstract: Titanium oxide passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source–drain electrode was deposited on an a-IGZO layer, and the passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at for 1 h.
DOI: 10.1149/1.3168522
Institutions: Yonsei University, LG (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funders: Yonsei University, LG Display
OpenAlex ID: W2005996849