Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4867525
Authors: Xiao-Hua Ma, Wei-Wei Chen, Bin Hou, Kai Zhang, Jie-Jie Zhu, Jin-Cheng Zhang, Xue-Feng Zheng, Yue Hao
Institution: Xidian University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: GaN基功率器件基础问题研究
OpenAlex ID: W2006259304