Work

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Year: 2011

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2011.12.029

Authors: Hyun Jong Park, Hong-Yeol Kim, Jun Young Bae, Seonghwan Shin, Jihyun Kim

Institutions: Samsung (South Korea), Korea University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Korea University, Ministry of Knowledge Economy, National Research Foundation of Korea, Ministry of Education, Science and Technology, Korea Institute of Energy Technology Evaluation and Planning

Award: G5146898719

OpenAlex ID: W2006571389

FWCI: 0.359

Cites: 17

Cited by: 5

Related to: 10