Work

Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

Year: 2005

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2005.06.014

Authors: S. Rao, F. Bergamini, R. Nipoti, S.E. Saddow

Institution: University of South Florida

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Forest Service, Office of Naval Research

OpenAlex ID: W2006646263

FWCI: 0.316

Cites: 15

Cited by: 7

Related to: 10