NiOx Schottky-gated ZnO nanowire metal–semiconductor field effect transistor: fast logic inverter and photo-detector
Year: 2014
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/c4tc00266k
Institution: Yonsei University
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2007105306
