Work

Growth of InMnAsSb/InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties

Year: 2002

Type: article

Abstract: New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown on InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements indicated that an InMnAsSb layer grown on InSb at 250°C has higher crystal quality than that grown at 280°C. By the irradiation of light with a wavelength longer than 2 µm at low temperatures, the magnetization was increased and this light-induced magnetization remained even after the light irradiation ceased. Corresponding to the Raman data, better light-induced ferromagnetic ordering was observed for the samples grown at 250°C.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.41.1019

Authors: Masahito Kanamura, Yi Kai Zhou, Shigekazu Okumura, Kumiko Asami, Makoto Nakajima, Hiroshi Harima, Hajime Asahi

Institutions: The Institute of Scientific and Industrial Research, The University of Osaka, The University of Osaka

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Research Promotion Foundation, Marubun Research Promotion Foundation

OpenAlex ID: W2007113898

FWCI: 0.654

Cites: 2

Cited by: 7

Related to: 10