Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction
Year: 1998
Type: article
Source: Journal of Electronic Materials
Authors: R. F. Kopf, R. A. Hamm, R. W. Ryan, A. Tate, J. Burm
Institutions: Alcatel-Lucent (France), Sogang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2007134045