Work

Er-related trap levels in GaAs:Er,O studied by optical spectroscopy under hydrostatic pressure

Year: 1997

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.56.10255

Authors: R. A. Hogg, K. Takahei, A. Taguchi

Institution: NTT Basic Research Laboratories

Language: English

Topic: Luminescence Properties of Advanced Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007140612

FWCI: 0.317

Cites: 22

Cited by: 12

Related to: 10