Work

Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures

Year: 2000

Type: article

Source: Chemical Vapor Deposition

DOI: 10.1002/(sici)1521-3862(200006)6:3<109::aid-cvde109>3.0.co;2-4

Authors: F. Fabreguette, L. Imhoff, M. Maglione, B. Domenichini, M. C. Marco de Lucas, P. Sibillot, S. Bourgeois, M. Sacilotti

Institutions: Centre National de la Recherche Scientifique, Université de Bourgogne

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007145124

FWCI: 4.226

Cites:

Cited by: 33

Related to: 10