Work

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Year: 2002

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(02)01348-9

Authors: D.D Koleske, A.E Wickenden, R.L Henry, M.E Twigg

Institutions: United States Naval Research Laboratory, Naval Research Laboratory Electronics Science and Technology Division

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Office of Naval Research, U.S. Naval Research Laboratory

OpenAlex ID: W2007152102

FWCI: 3.554

Cites: 75

Cited by: 281

Related to: 10