Work

Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy

Year: 1987

Type: article

Source: Thin Solid Films

DOI: 10.1016/0040-6090(87)90436-6

Authors: M. Iwami, Y. Watanabe, H. Kato, M. Nakayama, N. Sano

Institutions: Okayama University, Research Laboratory for Surface Science, Okayama University, Kwansei Gakuin University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007157799

FWCI: 0.273

Cites: 15

Cited by: 6

Related to: 10