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Defect States in CuInS2 Crystals Grown by Traveling Heater Method

Year: 2005

Type: article

Abstract: The defect-related donor-acceptor pair emissions in photoluminescence spectra of CuInS2 crystals grown by the traveling heater method have been investigated to characterize the defects in the crystals. The energy levels of donors have been deduced to be 36 and 63–69 meV. Acceptors have been estimated to lie much deeper with energy levels at 113, 150, 180 and 220 meV. The origin of the donor and acceptor levels is discussed.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.44.722

Authors: Takashi Onishi, Kenichiro Abe, Yoshihiro Miyoshi, Masaya Iwai, Kazuki Wakita

Institution: Osaka Prefecture University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2007172102

FWCI: 0.615

Cites: 16

Cited by: 10

Related to: 10