Work

Anodic Dissolution and Electroluminescence of p-Si at High Potentials in Fluoride Media

Year: 2002

Type: article

Abstract: The electrochemical dissolution of silicon in fluoride media under very high potentials (5-100 V) was investigated. The interface was characterized by voltammetry and in situ infrared spectroscopy. The infrared results indicate that the interfacial oxide becomes porous above a critical potential of ∼20 V. Light emission from the interface was observed for potentials above ∼10 V. The electroluminescence signal was found to be composed of a red component and a blue component. Both components exhibit an increase in intensity as a function of applied potential, but their distinct dependence suggests that they arise from two distinct types of oxide defects and excitation mechanisms. © 2002 The Electrochemical Society. All rights reserved.

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.1463403

Authors: M. Lharch, M. Aggour, J.-N. Chazalviel, F. Ozanam

Institutions: Université Ibn Zohr, Université Ibn-Tofail, École Polytechnique, Laboratoire de Physique de la Matière Condensée

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2007193391

FWCI: 0.217

Cites: 36

Cited by: 6

Related to: 10