Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations
Year: 1973
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1654884
Authors: T. R. Cass, V. G. K. Reddi
Institution: Hewlett-Packard (United States)
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2007208626