Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors
Year: 2012
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4723573
Authors: Tien-Yu Hsieh, Ting-Chang Chang, Te-Chih Chen, Ming-Yen Tsai, Yu-Te Chen, Yi-Chen Chung, Hung-Che Ting, Chia-Yu Chen
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2007352154