Work

Temperature- and Al/N ratio-dependent AlN seed layer formation on (110) Si substrates by using plasma-assisted molecular beam epitaxy

Year: 2014

Type: article

Source: Journal of the Korean Physical Society

DOI: 10.3938/jkps.64.1577

Authors: Young-Kyun Noh, Chul-Hyun Park, Jae-Eung Oh, Sang-Tae Lee, Moon-Deock Kim

Institutions: Hanyang University, Chungnam National University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Hanyang University

OpenAlex ID: W2007357912

FWCI:

Cites: 7

Cited by: 1

Related to: 10