Work

TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

Year: 2013

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2013.10.002

Authors: Dionysios Stefanakis, Konstantinos Zekentes

Institutions: FORTH Institute of Electronic Structure and Laser, Foundation for Research and Technology Hellas

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Università degli Studi Mediterranea di Reggio Calabria

OpenAlex ID: W2007804634

FWCI: 0.558

Cites: 29

Cited by: 54

Related to: 10