Work

Anomalous gate-to-drain capacitance characteristics of GaAs MESFET's

Year: 1983

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1983.21198

Authors: K. Yokoyama, M. Tomizawa, T. Takada, A. Yoshii

Institution: NTT (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007884069

FWCI: 3.863

Cites: 6

Cited by: 9

Related to: 10