Work

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Year: 2013

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2013.2266123

Authors: Francois Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, Nicolas Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude De Jaeger

Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, RWTH Aachen University, Aixtron (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007973196

FWCI: 1.274

Cites: 13

Cited by: 47

Related to: 10