Work

Formation of Ti silicides by metal-vapor vacuum arc ion source implantation

Year: 1995

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.359157

Authors: D. H. Zhu, B. X. Liu

Institutions: China Center of Advanced Science and Technology, Tsinghua University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008012016

FWCI: 1.477

Cites: 17

Cited by: 15

Related to: 10