Work

Effects of phonon coupling and free carriers on band-edge emission at room temperature in n-type ZnO crystals

Year: 2006

Type: article

Abstract: Room-temperature photoluminescence has been studied in n-type bulk ZnO crystals representing three different growth methods and having free-carrier concentrations (n) ranging from 1013to1018cm−3. The near-band-edge emission has both free-exciton and free-exciton-phonon contributions, with the strength of the phonon coupling dependent on sample defect concentrations. Band-gap shrinkage effects are used to explain a decrease in emission energy for the higher n values. Band filling and band nonparabolicity are predicted to be important for n>1019cm−3. At 300K, in the absence of free carriers, the free-exciton energy is 3.312±0.004eV.

Source: Applied Physics Letters

DOI: 10.1063/1.2410225

Authors: N. C. Giles, Chunchuan Xu, M. J. Callahan, Buguo Wang, J. S. Neal, L. A. Boatner

Institutions: West Virginia University, Hanscom Air Force Base, U.S. Air Force Research Laboratory Sensors Directorate, Oak Ridge National Laboratory

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2008043337

FWCI: 1.734

Cites: 17

Cited by: 36

Related to: 10