Year: 1999
Type: article
Abstract: We have investigated the electronic structures ofn- orp-type doped ZnO based onab initioelectronic band structure calculations. We findunipolarityin ZnO;n-type doping using Al, Ga or In species decreases the Madelung energy whilep-type doping using N species increases the Madelung energy, in addition to causing substantial localization of the N states. Codoping using reactive codopants, Al, Ga or In, enhances the incorporation of N acceptors inp-type codoped ZnO. We find the delocalized states of N forp-type ZnO codoped with N and Al (Ga).
DOI: 10.1143/jjap.38.l166
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2008199525
