Year: 1994
Type: article
Abstract: Samples of CZ silicon doped with zinc and annealed in the temperature range 500-700 degrees C produce intense photoluminescence at liquid helium temperatures. The majority of the luminescence occurs in two vibronic bands with zero-phonon lines at 1129.57(5) meV and 1090.47(5) meV denoted Zn A and Zn B respectively. In both cases, split ground and excited states are observed. Isotope substitution experiments reveal that one zinc atom is incorporated in each of the defects. The spectra do not occur for FZ silicon unless oxygen is deliberately introduced in addition to zinc. We conclude that the defects are complexes of zinc and oxygen atoms which are produced during the annealing process but which dissociate for anneal temperatures above 700 degrees C. Uniaxial stress and magnetic field perturbation data show that the Zn A and Zn B defects are very similar in their structural and electronic properties. The spectra are attributed to electron-hole recombination at Zn-O defects, but the details of the electron and hole configurations and the precise nature of the Zn-O defects have not yet been determined.
Institution: Dublin City University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2008258180