Crystalline Structure Changes of Molybdenum Silicide Films Deposited by Sputtering and by Coevaporation after Isochronal Annealing
Year: 1982
Type: article
Abstract: Crystalline structure changes of molybdenum silicide films after isochronal annealing are studied by x‐ray and transmission electron microscopy. Two types of films deposited by sputtering from a hot pressed source and coevaporation of molybdenum and silicon, with controlled stoichiometry of , are prepared. For both types of depositions, the films that are as‐deposited and annealed at temperatures below 350°C are amorphous, but those annealed between 400° and 600°C show hexagonal . Transformation from hexagonal to tetragonal occurs above 700°C for the coevaporated film, whereas it proceeds gradually above 800°C for the sputtered film. A carbon stabilized phase is observed above 750°C for the sputtered film, which suggests that the sputtered film is contaminated by carbon during the deposition. Formation of the Mo‐rich silicides and above 700°C is evidence that the deposited films become Mo‐rich during the annealing due to slight oxidation of the film surface.
DOI: 10.1149/1.2124199
Authors: Kenji Shibata, Shohei Shima, Masahiro Kashiwagi
Institution: Toshiba (Japan)
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2008296147
