Work

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Year: 2008

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad.2008.4648232

Authors: Y.C. Song, X.Y. Liu, Z.Y. Wang, K. Zhao, G. Du, J.F. Kang, R.Q. Han, Z.L. Xia, D. Kim, K.-H. Lee

Institutions: Peking University, Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008299534

FWCI: 1.422

Cites: 9

Cited by: 5

Related to: 10