Work

Molecular beam epitaxy and field emission deposition for metal film growth on III–V compound semiconductors—A comparative study

Year: 1979

Type: article

Source: Thin Solid Films

DOI: 10.1016/0040-6090(79)90235-9

Authors: R.F.C. Farrow, A.G. Cullis, A.J. Grant, G.R. Jones, R. Clampitt

Institution: United Kingdom Atomic Energy Authority

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008427331

FWCI: 3.216

Cites: 9

Cited by: 19

Related to: 10