Work

KrF excimer laser induced ablation–planarization of GaN surface

Year: 1999

Type: article

Source: Applied Surface Science

DOI: 10.1016/s0169-4332(99)00156-7

Authors: T. Akane, K. Sugioka, H. Ogino, H. Takai, K. Midorikawa

Institutions: RIKEN, Tokyo Denki University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: RIKEN

OpenAlex ID: W2008679342

FWCI: 1.735

Cites: 11

Cited by: 24

Related to: 10