Work

Microstructure analysis in strained-InGaN/GaN multiple quantum wells

Year: 2008

Type: article

Source: Microelectronics Journal

DOI: 10.1016/j.mejo.2008.07.068

Authors: Huaping Lei, Jun Chen, Xunya Jiang, Gérard Nouet

Institutions: Chinese Academy of Sciences, Centre de Recherche sur les Ions, les Matériaux et la Photonique, Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Functional Materials for Informatics, Université de Caen Normandie

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2009658291

FWCI: 0.434

Cites: 12

Cited by: 15

Related to: 10