Work

Determination of interface state density especially at the band edges by noise measurements on MOSFETs

Year: 1987

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(87)90092-x

Authors: O. Jäntsch, B. Borchert

Institution: Siemens (Germany)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010021952

FWCI: 1.508

Cites: 16

Cited by: 17

Related to: 10